FDS9953A |
RFQ for FDS9953A Required Field |
 |
| Technical/Catalog Information | FDS9953A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 2.9A |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 1A, 10V |
| Input Capacitance (Ciss) @ Vds | 185pF @ 15V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 3.5nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS9953A FDS9953A |
| Product | Manufacturers | Pack | D/C |
| FDS9953A | - | 06+ | 22000 |
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
Typical Application |
Features |
| Power management Load switch Battery protection | 2.9 A, 30 V RDS(ON) = 130 m @ VGS = 10 V RDS(ON) = 200 m @ VGS = 4.5 V Low gate charge (2.5nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability |
| Symbol | Parameter |
Ratings |
Units | |
| VDSS | Drain-Source Voltage |
-30 |
V | |
| VGSS | Gate-Source Voltage |
±25 | ||
| ID |
Drain Current |
Continuous (Note 1a) Pulsed |
±2.9 |
A |
|
±10 | ||||
| PD |
Power Dissipation for Dual Operation |
2 |
W | |
| Power Dissipation for Single Operation |
(Note 1a) (Note 1b) (Note 1c) |
1.6 | ||
|
1 | ||||
|
0.9 | ||||
| TJ, TSTG | Operating and Storage Junction Temperature Range |
55 to +150 |
°C | |
